首页>
外国专利>
Memory Structures and Arrays, and Methods of Forming Memory Structures and Arrays
Memory Structures and Arrays, and Methods of Forming Memory Structures and Arrays
展开▼
机译:内存结构和数组,以及形成内存结构和数组的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memory cell electrode, and can include a second diode electrode laterally outward of the first diode electrode and not directly over the memory cell. Some embodiments include memory arrays comprising the memory structures, and some embodiments include methods of making the memory structures.
展开▼