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Method and structure for forming high performance MOS capacitor along with fully depleted semiconductor on insulator devices on the same chip
Method and structure for forming high performance MOS capacitor along with fully depleted semiconductor on insulator devices on the same chip
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机译:在同一芯片上的绝缘体器件上形成高性能MOS电容器以及完全耗尽的半导体的方法和结构
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摘要
An integrated circuit is provided that includes a fully depleted semiconductor device and a capacitor present on a semiconductor on insulator (SOI) substrate. The fully depleted semiconductor device may be a finFET semiconductor device or a planar semiconductor device. In one embodiment, the integrated circuit includes a substrate having a first device region and a second device region. The first device region of the substrate includes a first semiconductor layer that is present on a buried insulating layer. The buried insulating layer that is in the first device region is present on a second semiconductor layer of the substrate. The second device region includes the second semiconductor layer, but the first semiconductor layer and the buried insulating layer are not present in the second device region. The first device region includes the fully depleted semiconductor device. A capacitor is present in the second device region.
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