首页> 外国专利> MODELING TRANSITION EFFECTS FOR CIRCUIT OPTIMIZATION

MODELING TRANSITION EFFECTS FOR CIRCUIT OPTIMIZATION

机译:为电路优化建模过渡效果

摘要

Systems and techniques are described for determining a transition-effect model for a timing arc of a library cell. A transition-effect model can be determined for each library cell that is used during an optimization process. The transition-effect models enable an optimization system to estimate the impact of a change in the transition at an output of a driver gate on the delays of downstream gates without requiring to propagate the change in the transition to the downstream gates. Once determined, the transition-effect models can be used to compute one or more transition-induced penalties during circuit optimization. An optimization system can then use the one or more transition-induced penalties to determine whether or not to accept an optimizing transformation, or to discretize a solution obtained from a numerical solver.
机译:描述了用于确定库单元的时序弧的过渡效果模型的系统和技术。可以为优化过程中使用的每个库单元确定过渡效果模型。过渡效应模型使优化系统能够估计驱动器门输出处过渡变化对下游门延迟的影响,而无需将过渡变化传播到下游门。一旦确定,过渡效应模型可用于计算电路优化期间的一个或多个过渡诱发的惩罚。然后,优化系统可以使用一个或多个过渡引起的惩罚来确定是否接受优化变换,或者离散化从数值解算器获得的解。

著录项

  • 公开/公告号US2013145338A1

    专利类型

  • 公开/公告日2013-06-06

    原文格式PDF

  • 申请/专利权人 SYNOPSYS INC.;

    申请/专利号US201213629400

  • 发明设计人 AMIR H. MOTTAEZ;MAHESH A. IYER;

    申请日2012-09-27

  • 分类号G06F17/50;

  • 国家 US

  • 入库时间 2022-08-21 16:46:53

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号