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Backside illuminated imaging sensor with improved infrared sensitivity
Backside illuminated imaging sensor with improved infrared sensitivity
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机译:背面照明的成像传感器具有改进的红外灵敏度
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摘要
A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
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