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Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers
Field effect transistor devices having thick gate dielectric layers and thin gate dielectric layers
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机译:具有厚的栅极介电层和薄的栅极介电层的场效应晶体管器件
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摘要
A method includes forming a first gate stack over a portion of a fin, forming a dummy gate stack over the fin, growing an epitaxial material from exposed portions of the fin, forming a layer of dielectric material over the epitaxial material, the first gate stack, and the dummy gate stack, performing a planarizing process that removes portions of the layer of dielectric material, the first gate stack, and the dummy gate stack, pattering a first mask over portions of the layer of dielectric material and the dummy gate stack, forming a silicide material on exposed portions of the first gate stack, removing the first mask, pattering a second mask over portions of the layer of dielectric material and the first gate stack, removing a polysilicon portion of the dummy gate stack to define a cavity, removing the second mask, and forming a second gate stack in the cavity.
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