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Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy
Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy
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机译:具有确定的面内磁各向异性过程的磁隧道结膜结构阵列
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摘要
An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.
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