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Replacement gate approach based on a reverse offset spacer applied prior to work function metal deposition
Replacement gate approach based on a reverse offset spacer applied prior to work function metal deposition
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机译:基于在功函数金属沉积之前应用的反向偏移间隔物的替换栅极方法
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摘要
In a replacement gate approach, a spacer may be formed in the gate opening after the removal of the placeholder material, thereby providing a superior cross-sectional shape upon forming any electrode metals in the gate opening. Moreover, the spacer may be used for reducing the gate length, while not requiring more complex gate patterning strategies.
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