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Method for fabricating a micro-electronic device equipped with semi-conductor zones on an insulator with a horizontal GE concentration gradient
Method for fabricating a micro-electronic device equipped with semi-conductor zones on an insulator with a horizontal GE concentration gradient
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机译:在具有水平GE浓度梯度的绝缘体上制造具有半导体区的微电子器件的方法
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摘要
A manufacturing method of a microelectronic device including at least one semi-conductor zone which rests on a support and which exhibits a germanium concentration gradient in a direction parallel to the principal pane of the support.
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