Method of manufacturing a device provided with zones microelectronics semi - conductive on insulator a horizontal gradient of the concentration of ge.

摘要

The present invention relates to a method of producing a microelectronic device comprising at least one zone of semi conducting - (240, 340, 440, 740, 840, 940) resting on a support and having, in a direction parallel to principal plane of the support, a concentration gradient of the germanium, the method comprising the steps of: a) formed on a support of at least one masking (208) to oxidation comprising one or more holes (112, 114), the holes, exposing at least a first zone a semi conducting - (120, 220) comprising the inclined flanks (121, 122), and based on si, b) the formation of at least one second zone, a semi conducting - (130, 230) based on si1 - xgex (with 0 ≦ x) on the said first zone a semi - condutrice based on si, c) thermal oxidation through said masking of the said first zone a semi - conductive and said second zone, a semi conducting -.