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Tunneling magnetoresistive (TMR) read head with low magnetic noise
Tunneling magnetoresistive (TMR) read head with low magnetic noise
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机译:具有低磁噪声的隧道磁阻(TMR)读头
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摘要
A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording disk drive, has low magnetic damping, and thus low mag-noise, as a result of the addition of a ferromagnetic backing layer to the ferromagnetic free layer. The backing layer is a material with a low Gilbert damping constant or parameter α, the well-known dimensionless coefficient in the Landau-Lifshitz-Gilbert equation. The backing layer may have a thickness such that it contributes up to two-thirds of the total moment/area of the combined free layer and backing layer. The backing layer may be formed of a material having a composition selected from (CoxFe(100-x))(100-y)Xy, (Co2Mn)(100-y)Xy and (Co2FexMn(1-x))(100-y)Xy, where X is selected from Ge, Al and Si, and (Co2Fe)(100-y)Aly, where y is in a range that results in a low damping constant for the material.
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机译:隧道磁阻(TMR)设备,如用于磁记录磁盘驱动器的TMR读取头,由于在铁磁自由层上添加了铁磁衬里层,因此具有较低的磁阻尼,从而具有较低的磁噪声。衬层是具有低吉尔伯特阻尼常数或参数α(Landau-Lifshitz-Gilbert方程中众所周知的无量纲系数)的材料。背衬层的厚度可以使得其贡献了组合的自由层和背衬层的总力矩/面积的三分之二。背衬层可以由具有选自(Co x Sub> Fe (100-x) Sub>)(100-y) Sub>的成分的材料形成。 X y Sub>,(Co 2 Sub> Mn)(100-y) Sub> X y Sub>和(Co 2 Sub> Fe x Sub> Mn (1-x) Sub>)(100-y) Sub> X y Sub>,其中X选自Ge,Al和Si以及(Co 2 Sub> Fe)(100-y) Sub> Al y Sub>,其中y在范围导致材料的阻尼常数低。
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