embedded image "/> High performance solution processable semiconductor based on dithieno 2,3-D:2′, 3′-D′benzo1,2-B:4,5-B′ dithiophene
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High performance solution processable semiconductor based on dithieno 2,3-D:2′, 3′-D′benzo1,2-B:4,5-B′ dithiophene

机译:基于二噻吩并[2,3-D:2',3'-D']苯并[1,2-B:4,5-B']二噻吩的高性能溶液可加工半导体

摘要

Dithienobenzodithiophenes of general formula (I) in which R1 to R6 are each independently selected from a) H, b) halogen, c) —CN, d) —NO2, e) —OH, f) a C1-20 alkyl group, g) a C2-20 alkenyl group, h) a C2-20 alkynyl group, i) a C1-20 alkoxy group, j) a C1-20 alkylthio group, k) a C1-20 haloalkyl group, I) a —Y—C3-10 cycloalkyl group, m) a —Y—C6-14 aryl group, n) a —Y-3-12 membered cyclo-heteroalkyl group, or o) a —Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl group, the 3-12 membered cyc-loheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1-4 R7 groups, wherein R1 and R3 and R2 and R4 may also together form an aliphatic cyclic moiety, Y is independently selected from divalent a C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; and m is independently selected from 0, 1, or 2. The invention also relates to the use of the dithienobenzodithiophenes according to any of claims 1 to 4 as semiconductors or charge transport materials, as thin-film transistors (TFTs), or in semiconductor components for organic light-emitting diodes (OLEDs), for photovoltaic components or in sensors, as an electrode material in batteries, as optical waveguides or for electrophotography applications.; embedded image
机译:通式(I)的二噻吩并二苯并噻吩各自独立地选自a)H,b)卤素,c)-CN,d)-NO,其中R 1 至R 6 2 ,e)-OH,f)C 1-20 烯基,g)C 2-20 烯基,h)一个C 2-20 炔基,i)一个C 1-20 烷氧基,j)一个C 1-20 烷硫基,k )C 1-20 卤代烷基,I)-Y-C 3-10 环烷基,m)-Y-C 6-14 < / Sub>芳基,n)-Y-3-12元环杂烷基,或o)-Y-5-14元杂芳基,其中每个C 1-20 烷基,C 2-20 烯基,C 2-20 炔基,C 3-10 环烷基,C 6-14 芳基,3-12元环-杂烷基和5-14元杂芳基任选被1-4个R 7 基团取代,其中R 1 和R 3 和R 2 和R 4 Y形成脂族环状部分,Y独立地选自二价C 1-6 烷基,二价C 1-6 卤代烷基或共价键;和m独立地选自0、1或2。本发明还涉及根据权利要求 1 4 中任一项的二噻吩并苯并二噻吩作为半导体或电荷传输的用途。材料,如薄膜晶体管(TFT)或有机发光二极管(OLED)的半导体组件,光伏组件或传感器中的材料,电池中的电极材料,光波导或电子照相应用的材料; “嵌入式图像”

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