首页> 外国专利> DYE ADSORPTION DEVICE, DYE ADSORPTION METHOD, AND SUBSTRATE TREATMENT APPARATUS

DYE ADSORPTION DEVICE, DYE ADSORPTION METHOD, AND SUBSTRATE TREATMENT APPARATUS

机译:染料吸附装置,染料吸附方法和基质处理装置

摘要

[Problem] To significantly reduce processing time of a step of adsorbing dye in a porous semiconductor layer on a substrate surface. [Solution] A flow of a dye solution is formed in a gap between solution guide surfaces (92L, 92R) of a nozzle (20) and a substrate (G) during treatment, and a porous semiconductor layer of a treated surface of the substrate is subject to dye adsorption treatment in this flow of the dye solution. Furthermore, impact pressure from slit like discharge openings (88L, 88R) and pressure of turbulent flow in groove like uneven sections (94L, 94R) act in the vertical direction in addition to the flow of the dye solution. Thus aggregation and association of the dye are hardly caused on a surface part of the porous semiconductor layer of the treated surface of the substrate, the dye efficiently penetrates deeply into the porous semiconductor layer and the dye adsorption into the porous semiconductor layer proceeds at high speed.
机译:[问题]为了显着减少将染料吸附在基板表面上的多孔半导体层中的步骤的处理时间。 [解决方案]在处理期间,在喷嘴(20)的溶液引导面(92L,92R)与基板(G)之间的间隙中,在基板的被处理面的多孔质半导体层中形成染料溶液流。在这种染料溶液流中进行染料吸附处理。此外,除了染料溶液的流动之外,来自狭缝状的排出口(88L,88R)的冲击压力和槽状的凹凸部(94L,94R)中的湍流的压力在垂直方向上起作用。因此,几乎不会在基板的被处理表面的多孔半导体层的表面部分上引起染料的聚集和缔合,染料有效地深深地渗透到多孔半导体层中,并且染料高速吸附到多孔半导体层中。 。

著录项

  • 公开/公告号IN2013KN01644A

    专利类型

  • 公开/公告日2013-10-11

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN1644/KOLNP/2013

  • 申请日2013-05-24

  • 分类号H01M14/00;H01L31/04;

  • 国家 IN

  • 入库时间 2022-08-21 16:40:57

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