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DYE ADSORPTION DEVICE, DYE ADSORPTION METHOD, AND SUBSTRATE TREATMENT APPARATUS

机译:染料吸附装置,染料吸附方法和基质处理装置

摘要

[Problem] To significantly reduce processing time of a step of adsorbing dye in a porous semiconductor layer on a substrate surface. [Solution] A flow of a dye solution is formed in a gap between solution guide surface (92L, 92R) of a nozzle (20) and a substrate (G) during the treatment, and a porous semiconductor layer of a treated surface of the substrate is subject to dye adsorption treatment in this flow of the dye solution. Furthermore, impact pressure from slit-like discharge openings (88L, 88R) and pressure of turbulent flow in groove-like uneven sections (92L, 92R) act in the vertical direction in addition to the flow of the dye solution. Thus, aggregation and association of the dye are hardly caused on a surface part of the porous semiconductor layer of the treated surface of the substrate, the dye efficiently penetrates deeply into the porous semiconductor layer, and the dye adsorption into the porous semiconductor layer proceeds at high speed.
机译:[问题]为了显着减少将染料吸附在基板表面上的多孔半导体层中的步骤的处理时间。 [解决方案]在处理过程中,在喷嘴(20)的溶液引导面(92L,92R)与基板(G)之间的间隙中形成染料溶液流,并且在该处理表面中形成多孔半导体层。在这种染料溶液流中,对基材进行染料吸附处理。另外,来自缝隙状的排出口88L,88R的冲击压力和槽状的凹凸部92L,92R中的紊流的压力除了染料溶液的流动以外,还沿上下方向作用。因此,几乎不会在基板的被处理表面的多孔半导体层的表面部分上引起染料的聚集和缔合,染料有效地深深地渗透到多孔半导体层中,并且染料在多孔半导体层中的吸附在90℃进行。高速。

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