METHOD FOR REMOVING A THIN LAYER OF SixNy FROM Si SURFACE WITHOUT AFFECT TO p/n ALLOY Si LAYER

摘要

The invention aims - to prepare the semiconductor bolster substrate, cover it appropriate passivation layer and in said passivation layer to form in fixed locations of given shape and size of the cells in order to open up the surface of the semiconductor for technological processing, especially for selective chemical metal precipitation. Thus, the prepared composite element can be used for a variety of semiconductor device fabrication, particularly in solar cell production. The cells forming method in the composite element is characterized in that comprises the laser ablation with ultra-shot Femtosecond (fs) ultraviolet (UV) pulses and chemical etching. This method allows forming of these cells to form over the semiconductor substrate on thin alloy layers, thin heterojunctions and other thin semiconductor substrates, while maintaining the integrity of the layers. This method is contactless and can therefore be applied to form contacts on very thin and brittle semiconductor or doped semiconductor layers, without prejudice to the semiconductor surface than mechanically or thermally. Using a high frequency rate laser systems pattern formation speed allows to apply the method in high-throughput production processes.