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Sensors spintronic magnetic nanoparticles with an active area located in a magnetic domain wall

机译:传感器自旋电子磁性纳米粒子的有效区域位于磁畴壁中

摘要

A sensor detecting the presence of magnetic nanoparticle, said sensor comprising: a support (1) on which the sensor is disposed; a plurality of non-magnetic contacts (Iin, GND, V1, V2) arranged on the carrier and electrically and conductively connected to the sensor; the means of measuring the magnetoresistance of the sensor connected to said plurality of non-magnetic contacts, characterized in that: - the sensor includes a planar ferromagnetic structure (3) comprising a sensing area (31), formed as a strip bent to form a corner, - the sensor is structured to apply a magnetic field to cause the detection area selectively assume, as a response to applied magnetic field: a first spin configuration comprising a domain wall (TW) " head-to-head ", and a second spin configuration, wherein said domain wall (TW) is absent, wherein said transition between the first configuration and the second configuration is provided by the applied magnetic field, which has a component which is parallel to one side of the angle detection area with a higher transition threshold predictable (H1x) intensity; It said transition threshold, detectable by I being magnetoresistance affected by the proximity of a magnetic nanoparticle (N) to the sensing area. - said measurement means is structured to provide a measure of said transition threshold by magnetoresistance measurements detection area in said first and second spin configurations assumed upon application of said magnetic field.
机译:一种检测磁性纳米粒子的存在的传感器,所述传感器包括:支撑物(1),所述传感器设置在所述支撑物上。多个非磁性触点(Iin,GND,V1,V2)布置在载体上并与传感器电导通连接;一种用于测量连接到所述多个非磁性触点的传感器的磁阻的装置,其特征在于:-所述传感器包括平面铁磁结构(3),所述平面铁磁结构包括感测区域(31),形成为弯曲成条状的带状。 -传感器被构造成施加磁场以使检测区域选择性地假定为对施加的磁场的响应:第一旋转结构,其包括“头对头”的畴壁(TW),第二结构自旋构型,其中不存在所述畴壁(TW),其中所述第一构型和第二构型之间的所述过渡由所施加的磁场提供,所述施加的磁场具有与角度检测区域的一侧平行且具有较高角度的分量过渡阈值可预测(H1x)强度;所说的转变阈值可以通过I检测,该I是受磁性纳米粒子(N)与感测区域的接近影响的磁阻。 -所述测量装置被构造成通过在施加所述磁场时假定的所述第一和第二自旋配置中的磁阻测量检测区域来提供对所述转变阈值的测量。

著录项

  • 公开/公告号ES2390403T3

    专利类型

  • 公开/公告日2012-11-12

    原文格式PDF

  • 申请/专利权人 POLITECNICO DI MILANO;

    申请/专利号ES20090734585T

  • 发明设计人 VAVASSORI PAOLO;BERTACCO RICCARDO;

    申请日2009-04-22

  • 分类号G01R33/12;G01N33/543;

  • 国家 ES

  • 入库时间 2022-08-21 16:38:53

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