WAFER SURFACE-TREATMENT METHOD AND SURFACE-TREATMENT LIQUID, AND SURFACE-TREATMENT AGENT, SURFACE-TREATMENT LIQUID, AND SURFACE-TREATMENT METHOD FOR SILICON-NITRIDE-CONTAINING WAFERS

摘要

Disclosed is an elemental-silicon-containing-wafer surface-treatment method in which an elemental-silicon-containing wafer surface is hydrophobized to increase the adhesion between said wafer and a resist. Said method includes the following steps: a surface-treatment step in which the surface of the wafer is hydrophobized by bringing an elemental-silicon-containing-wafer surface-treatment liquid into contact with the wafer surface; a treatment-liquid removal step in which the treatment liquid is removed from the wafer surface; and a resist-formation step in which a resist is formed on the wafer surface. This method is characterized in that an elemental-silicon-containing-wafer surface-treatment liquid containing a silicon compound represented by general formula (I-1), an acid, and a diluent solvent is used in the surface-treatment step.(I-1) R¹_aSiX_4−a(In formula (I-1), each R¹ independently represents either a hydrogen group or a C_1-18 hydrocarbon group in which a hydrogen atom may be substituted with a halogen atom; each X independently represents a monovalent functional group, nitrogen being the element of which that bonds to elemental silicon; and a represents an integer from 1 to 3.)