WAFER SURFACE-TREATMENT METHOD AND SURFACE-TREATMENT LIQUID, AND SURFACE-TREATMENT AGENT, SURFACE-TREATMENT LIQUID, AND SURFACE-TREATMENT METHOD FOR SILICON-NITRIDE-CONTAINING WAFERS

摘要

It is disclosed that the height of the adhesion between the wafer and the resist by the hydrophobic wafer surface including the silicon element As a method for surface treatment of the wafer, the process shown below, Surface treatment step by contacting the surface treating solution for element-containing silicon wafer to the wafer surface to the wafer surface hydrophobic, Treatment liquid removing step of removing the processing solution from the wafer surface, A resist film forming step of forming a resist on the wafer surface The inclusion and silicon represented by the following general formula I-1 according to the surface treatment step compound, acid, and surface treatment of the silicon element-containing wafer, characterized by using a surface treating solution for silicon wafer including an element containing a diluting solvent way. [Formula I-1] [I-1 of the formula R ¹ are each independently a hydrogen group or a hydrocarbon group of a carbon number of 1 to 18 with each other, and the hydrogen atoms of the hydrocarbon group may be substituted with a halogen atom. X is independently a monovalent functional group and the silicon element of the element nitrogen to bond to one another, a is an integer from 1 ~ 3.]