首页> 外国专利> DYNAMIC BUFFER MANAGEMENT IN A NAND MEMORY CONTROLLER TO MINIMIZE AGE RELATED PERFORMANCE DEGRADATION DUE TO ERROR CORRECTION

DYNAMIC BUFFER MANAGEMENT IN A NAND MEMORY CONTROLLER TO MINIMIZE AGE RELATED PERFORMANCE DEGRADATION DUE TO ERROR CORRECTION

机译:由于误差校正,在NAND存储器控制器中进行动态缓冲区管理以最小化与年龄相关的性能降级

摘要

An output buffer circuit for a non-volatile memory stores data bits and error correction check ("ECC") bits. The output buffer circuit comprises an ECC circuit for receiving the data bits and the ECC bits to determine If the data bits need to be corrected. The ECC circuit supplies the data bits as its output and generates a correction signal. An ECC circuit receives the data bits and the ECC bits and generates corrected data bits. The output buffer circuit further has three or more storage circuits, which have an input/output port. A bus connects to the storage circuits and supplies data bits between each storage circuit, the nonvolatile memory, and the storage circuits, and supplies data bits as the output of the output buffer circuit. A switch circuit is associated with each storage circuit for receiving the data bits; and the storage bits are output to the storage circuit.
机译:用于非易失性存储器的输出缓冲电路存储数据位和纠错校验(“ ECC”)位。输出缓冲器电路包括用于接收数据位和ECC位以确定是否需要校正数据位的ECC电路。 ECC电路提供数据位作为其输出并生成校正信号。 ECC电路接收数据位和ECC位并生成校正后的数据位。输出缓冲电路还具有三个或更多具有输入/输出端口的存储电路。总线连接到存储电路,并在每个存储电路,非易失性存储器和存储电路之间提供数据位,并提供数据位作为输出缓冲电路的输出。开关电路与每个存储电路相关联,用于接收数据位。存储位被输出到存储电路。

著录项

  • 公开/公告号EP2577666A1

    专利类型

  • 公开/公告日2013-04-10

    原文格式PDF

  • 申请/专利权人 GREENLIANT LLC;

    申请/专利号EP20110790176

  • 发明设计人 ARYA SIAMAK;

    申请日2011-05-16

  • 分类号G11C7/10;

  • 国家 EP

  • 入库时间 2022-08-21 16:30:08

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号