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HEAT TREATMENT METHOD FOR WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS
HEAT TREATMENT METHOD FOR WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS
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机译:晶片的热处理方法,硅晶片的制造方法,硅晶片和热处理装置
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摘要
The present invention is a method for heat-treating a wafer, the method by which heat treatment at a predetermined temperature with rapid rise and fall of temperature is performed by performing heating by a heating source in a state in which a principal surface (a first principal surface) of a wafer is supported by a supporting member, the method in which heat treatment is performed with control of the heating source being performed in such a way that the temperature of the first principal surface supported by the supporting member becomes 1 to 25°C higher than the temperature of a principal surface (a second principal surface) opposite to the first principal surface of the wafer. As a result, a method for heat-treating a wafer, the method that can reliably suppress a slip dislocation generated from a wafer supporting position when heat treatment is performed on a silicon wafer, is provided.
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