首页> 外国专利> GATE-FOCUSING ELECTRODE INTEGRATED ELECTRODE STRUCTURE FOR MOLDING AN ELECTRON BEAM GENERATED IN AN X-RAY TUBE WHICH UNITS WITH A PART OF A GRID ELECTRODE

GATE-FOCUSING ELECTRODE INTEGRATED ELECTRODE STRUCTURE FOR MOLDING AN ELECTRON BEAM GENERATED IN AN X-RAY TUBE WHICH UNITS WITH A PART OF A GRID ELECTRODE

机译:选通电极集成电极结构,用于模制X射线管中产生的电子束,该X射线管中带有部分网格电极

摘要

PURPOSE: A gate-focusing electrode integrated electrode structure is provided to mold an electron beam by differently controlling compression ratio using an opening structure of a focusing electrode.;CONSTITUTION: A nano emitter(210) is comprised of nanostructure material emitting an electron. A grid electrode(220) is separated from the nano emitter. The grid electrode extracts a part of the electron or the entire of the electron which is emitted from the nano emitter. An adjusting device is combined with a part of the grid electrode. The adjusting device focuses electron beam formed by the electron. A focusing electrode(230) comprises the adjusting device.;COPYRIGHT KIPO 2013
机译:目的:提供一种栅极聚焦电极集成电极结构,通过使用聚焦电极的开口结构通过不同地控制压缩比来模制电子束。;组成:纳米发射器(210)由发射电子的纳米结构材料组成。栅极(220)与纳米发射器分离。栅电极提取从纳米发射器发射的一部分电子或全部电子。调节装置与一部分栅电极结合。调节装置聚焦由电子形成的电子束。聚焦电极(230)包括调节装置。; COPYRIGHT KIPO 2013

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