首页> 外国专利> GRAPHENE ELECTRONIC DEVICE HAVING A MULTI-LAYERED GATE INSULATING LAYER FOR PREVENTING HOLE DOPING OF A GRAPHENE

GRAPHENE ELECTRONIC DEVICE HAVING A MULTI-LAYERED GATE INSULATING LAYER FOR PREVENTING HOLE DOPING OF A GRAPHENE

机译:具有多层门绝缘层的石墨烯电子器件,用于防止石墨烯的孔掺杂

摘要

PURPOSE: A graphene electronic device having a multi-layered gate insulating layer is provided to improve electrical characteristics of a grapheme by forming a gate insulating layer of a double layer between a graphene channel layer and a gate electrode.;CONSTITUTION: A conductive substrate serves as a gate electrode. A gate insulating layer(120) is arranged on the substrate. A graphene channel layer(130) is formed on the gate insulating layer. A source electrode(141) and a drain electrode(142) are arranged on both ends of the graphene channel layer. The gate insulating layer comprises and inorganic material insulating layer and an organic compound insulating layer on the inorganic material insulating layer.;COPYRIGHT KIPO 2013
机译:目的:提供一种具有多层栅极绝缘层的石墨烯电子器件,以通过在石墨烯沟道层和栅电极之间形成双层的栅极绝缘层来改善石墨烯的电学特性。作为栅电极。栅极绝缘层(120)布置在基板上。石墨烯沟道层(130)形成在栅极绝缘层上。源电极(141)和漏电极(142)布置在石墨烯沟道层的两端。栅极绝缘层包括无机材料绝缘层和在无机材料绝缘层上的有机化合物绝缘层。; COPYRIGHT KIPO 2013

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