首页> 外国专利> INGOT GROWING APPARATUS AND AN INGOT GROWING METHOD FOR SMOOTHLY SUPPLYING A SILICON SOURCE WITHIN A CRUCIBLE

INGOT GROWING APPARATUS AND AN INGOT GROWING METHOD FOR SMOOTHLY SUPPLYING A SILICON SOURCE WITHIN A CRUCIBLE

机译:用于在坩埚内平稳地供应硅源的锭生长装置和锭生长方法

摘要

PURPOSE: An ingot growing apparatus and an ingot growing method are provided to block heat radiating from a silicon solution using a shielding member installed at the top of a crucible.;CONSTITUTION: A crucible(104) is installed inside a growth chamber(101). A shielding member(220) is installed on the top of the crucible. The shielding member is placed in a shielding position and a release position. A lifting unit supports the shielding member. The lifting unit converts the shielding member into the shielding position and the release position.;COPYRIGHT KIPO 2013
机译:目的:提供了一种硅锭生长设备和一种硅锭生长方法,以利用安装在坩埚顶部的屏蔽部件来阻止硅溶液的热辐射。组成:坩埚(104)安装在生长室(101)内。屏蔽部件(220)安装在坩埚的顶部。屏蔽构件被置于屏蔽位置和释放位置。提升单元支撑屏蔽构件。提升单元将屏蔽部件转换为屏蔽位置和释放位置。; COPYRIGHT KIPO 2013

著录项

  • 公开/公告号KR20120138065A

    专利类型

  • 公开/公告日2012-12-24

    原文格式PDF

  • 申请/专利权人 SEMIMATERIALS. CO. LTD.;

    申请/专利号KR20110057352

  • 发明设计人 KIM BOK SAENG;

    申请日2011-06-14

  • 分类号C30B15/00;C30B29/06;H01L21/02;

  • 国家 KR

  • 入库时间 2022-08-21 16:28:19

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