IMPURITY CONTROL IN ＨＤＰ-ＣＶＤ ＤＥＰ/ＥＴＣＨ/ＤＥＰ PROCESSES

摘要

A method of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber is disclosed. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate in the gap using a high density plasma process. A portion of the deposited first portion of the silicon oxide film is then etched back. Etching includes flowing a halogen precursor from the halogen precursor source through the first conduit to the substrate processing chamber, forming a high density plasma from the halogen precursor, and halogen free after the portion is etched back. Terminating the flow of the cursor. Thereafter, a halogen scavenger is flowed into the substrate processing chamber to react with the remaining halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film in the gap using a high density plasma process.