NON-POLAR SUBSTRATE HAVING HETERO-STRUCTURE, AN NITRIDE-BASED LIGHT EMITTING DEVICE USING THE SAME, AND A METHOD FOR MANUFACTURING THE SAME CAPABLE OF REDUCING CRYSTAL DEFECTS

摘要

PURPOSE: A non-polar substrate having hetero-structure, an nitride-based light emitting device using the same, and a method for manufacturing the same are provided to implement an optical extraction pattern on an n-type nitride semiconductor layer without using an additional process and to improve the optical efficiency of an light emitting diode.;CONSTITUTION: A nitride-based layer(120) is formed on a non-polar substrate. A defect buffering layer(130) is formed on the nitride-based layer. The defect buffering layer include a unit structure(133) made of a dielectric material. An air gap(132) is formed on the unit structure. A nitride semiconductor layer(140) is formed on the defect buffering layer.;COPYRIGHT KIPO 2013