ANTI-FUSE CIRCUIT USING A MAGNETIC TUNNEL JUNCTION BREAKDOWN AND A SEMICONDUCTOR DEVICE INCLUDING THE SAME

摘要

PURPOSE: An anti-fuse circuit using a magnetic tunnel junction breakdown and a semiconductor device including the same are provided to reduce a layout size of the anti-fuse circuit by using an MRAM with a small size as a fuse.;CONSTITUTION: An anti-fuse array(111) includes a plurality of tunnel magneto-resistance elements and a plurality of transistors. The plurality of transistors are serially connected to the plurality of tunnel magneto-resistance elements, respectively. An anti-fuse array breaks down the magnetic tunnel junction of one or more tunnel magneto-resistance elements and stores fuse information. A sensing circuit(115) senses and amplifies the output signals of the anti-fuse array.;COPYRIGHT KIPO 2013