首页> 外国专利> METHOD FOR MANUFACTURING A POROUS THIN FILM STRUCTURE USING A DRY PROCESS, AND THE POROUS THIN FILM STRUCTURE MANUFACTURED BY THE SAME, CAPABLE OF RESOLVING THE PROBLEMS OF A WET PROCESS, AND EASILY CONTROLLING THE DRY PROCESS

METHOD FOR MANUFACTURING A POROUS THIN FILM STRUCTURE USING A DRY PROCESS, AND THE POROUS THIN FILM STRUCTURE MANUFACTURED BY THE SAME, CAPABLE OF RESOLVING THE PROBLEMS OF A WET PROCESS, AND EASILY CONTROLLING THE DRY PROCESS

机译:使用干式工艺制造多孔薄膜结构的方法,以及由该方法制造的多孔薄膜结构,能够解决湿法工艺的问题,并易于控制干式工艺

摘要

PURPOSE: A method for manufacturing a porous thin film structure using a dry process, and the porous thin film structure manufactured by the same are provided to maintain a constant porosity, thereby reproducing the sensitivities of sensors manufactured by the structure.;CONSTITUTION: A method for manufacturing a porous thin film structure using a dry process comprises: a step of simultaneously depositing at least two elements, which have a different reactivity on a certain reactive gas from each other, in order to form an alloy thin film; and a step of manufacturing a porous thin film by selectively removing one element having a larger reactivity than the reactivity of the other from the alloy thin film. In the step of forming the alloy thin film, the alloy thin film is formed with the elements by sputter deposition. The alloy thin film includes at least two kinds of elements selected from a group of Pt, Pd, Ru, Rh, Ag, Au, Cr, Mn, Fe, Co, Ni, Cu, Si, As, Ge, Os, Re, Te, Ir, Al, B, C, O, N, P, Ti, V, Zr, Nb, Mo, Hf, Ta, and W. In the step of manufacturing the porous thin film, the element selectively removed is at least one kind selected from a group of Si, As, Ge, Os, Re, Te, Ir, Al, B, C, O, N, P, Cu, Cr, Ti, V, Zr, Nb, Mo, Hf, Ta, and W.;COPYRIGHT KIPO 2013
机译:目的:提供一种使用干法制造多孔薄膜结构的方法,以及由该方法制造的多孔薄膜结构,以保持恒定的孔隙率,从而再现通过该结构制造的传感器的灵敏度。;构成:一种方法用于通过干法制造多孔薄膜结构的步骤包括:同时沉积至少两种在某种反应性气体上具有不同反应性的元素以形成合金薄膜的步骤;通过从合金薄膜中选择性地去除反应性比另一种反应性大的一种元素来制造多孔薄膜的步骤。在形成合金薄膜的步骤中,通过溅射沉积用元素形成合金薄膜。合金薄膜包括选自Pt,Pd,Ru,Rh,Ag,Au,Cr,Mn,Fe,Co,Ni,Cu,Si,As,Ge,Os,Re, Te,Ir,Al,B,C,O,N,P,Ti,V,Zr,Nb,Mo,Hf,Ta和W。在制造多孔薄膜的步骤中,至少有选择地除去的元素选自Si,As,Ge,Os,Re,Te,Ir,Al,B,C,O,N,P,Cu,Cr,Ti,V,Zr,Nb,Mo,Hf,Ta的一种和W.; COPYRIGHT KIPO 2013

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