PLASMA ION IMPLANTATION APPARATUS AND A METHOD THEREOF CAPABLE OF EFFICIENTLY PERFORMING A PLASMA ION IMPLANTATION PROCESS

摘要

PURPOSE: A plasma ion implantation apparatus and a method thereof are provided to perform an ion implantation process under a low process pressure.;CONSTITUTION: A vacuum chamber(1) maintains vacuum condition. A magnetron evaporation source(9) generates pulse plasma in the vacuum chamber. The magnetron evaporation source is placed on a conductivity sample mounting plate(12). An RF-DC combination part(7) couples pulse direct current(6) and RF power(4) together. The RF-DC combination part supplies RF-DC coupling power(8) to the magnetron evaporation source.;COPYRIGHT KIPO 2013;[Reference numerals] (10) Plasma; (11) Sample; (12) Sample mounting plate; (13) High voltage pulse power source part; (15) Gas control part; (16) Gas supply part; (19) Monitoring part; (2) RF power source part; (21) Vacuum pump; (3) RF matching part; (5) Pulse AC power source part; (7) RF-DC combination part; (9) Magnetron evaporation source