首页> 外国专利> A VACUUM RECYCLING EQUIPMENT FOR REFINING THE SOLAR GRADE POLY SILICON AND A METHOD FOR REFINING THE SOLAR GRADE POLY SILICON

A VACUUM RECYCLING EQUIPMENT FOR REFINING THE SOLAR GRADE POLY SILICON AND A METHOD FOR REFINING THE SOLAR GRADE POLY SILICON

机译:用于精制太阳能多晶硅的真空回收设备和用于精炼太阳能多晶硅的方法

摘要

PURPOSE: A solar grade polysilicon vacuum circulation refining equipment, and a solar grade polysilicon refining method using the same are provided to reduce time and original cost necessary for manufacturing polysilicon by being able to manufacture polysilicon solution of preset concentration. CONSTITUTION: A solar grade polysilicon vacuum circulation refining equipment comprises a vacuum degassing furnace(1), and a recursion vacuum processing furnace(2). The vacuum degassing furnace comprises a vacuum chamber(11), a silicon cask(12) installed inside of the vacuum chamber, and a inactive gas injecting device(13) installed on the silicon cask. A single nozzle connecting tube(22) of the recursion vacuum processing furnace is inserted in the silicon cask through a combining hole(112) of the vacuum chamber, the combined position of the combining hole and the recursion vacuum processing furnace is sealed, and the injected inactive gas is transferred to the single nozzle connecting tube. The vacuum degassing furnace and the recursion vacuum processing furnace are vacuumed through the first vacuum nozzle(111) of the vacuum chamber and the second vacuum nozzle(21) of the recursion vacuum processing furnace. The degree of vacuum of the vacuum degassing furnace and the recursion vacuum processing furnace are controlled, and the inside of the height of the recursion vacuum processing furnace of liquid silicon solution thereby is controlled.
机译:用途:提供太阳能级多晶硅真空循环精制设备和使用该设备的太阳能级多晶硅精制方法,以通过能够制造预设浓度的多晶硅溶液来减少制造多晶硅所需的时间和原始成本。组成:太阳能级多晶硅真空循环精制设备,包括真空脱气炉(1)和递归真空处理炉(2)。真空脱气炉包括真空腔室(11),安装在真空腔室内的硅桶(12),以及安装在硅桶上的惰性气体注入装置(13)。将递归真空处理炉的单个喷嘴连接管(22)通过真空室的结合孔(112)插入硅桶中,密封结合孔和递归真空处理炉的结合位置,并且注入的惰性气体被转移到单个喷嘴连接管。真空脱气炉和递归真空处理炉通过真空室的第一真空喷嘴(111)和递归真空处理炉的第二真空喷嘴(21)被抽真空。控制真空脱气炉和递归真空处理炉的真空度,从而控制液态硅溶液的递归真空处理炉的高度的内部。

著录项

  • 公开/公告号KR20130045177A

    专利类型

  • 公开/公告日2013-05-03

    原文格式PDF

  • 申请/专利权人 HUANG HSIU MIN;SUN WEN PIN;

    申请/专利号KR20120114785

  • 发明设计人 SUN WEN PIN;

    申请日2012-10-16

  • 分类号C01B33/021;C01B33/035;C30B29/06;B01J19/26;

  • 国家 KR

  • 入库时间 2022-08-21 16:27:13

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