LIGHT EMITTING DEVICE FOR IMPROVING LIGHT EFFICIENCY USING AN SPR(SURFACE PLASMA RESONANCE) PHENOMENON

摘要

PURPOSE: A light emitting device is provided to improve production yield and quality by forming a light extraction structure on the entire wafer using a dry etch process.;CONSTITUTION: A light emitting structure(160) is positioned on a substrate(110). The light emitting structure includes a first semiconductor layer(162), an active layer(164), and a second semiconductor layer(166) having a recess part(170). A pattern layer(180) including Au or Ag is positioned on a protruded region of the recess part. The pattern layer is periodically formed with a gap which is smaller than the wavelength of the light generated from the active layer. A second electrode layer(190) is positioned on a second semiconductor layer.;COPYRIGHT KIPO 2013