SICN FILM FORMATION METHOD, CAPABLE OF RELATIVELY MAKING AN ETCHING RATE IN A CLEANING SMALL IN DEPOSITING IN A RELATIVELY LOW TEMPERATURE

摘要

PURPOSE: A SiCN film formation method is provided to form a SiCN film on a processed substrate by reiterating a following cycle several times in a processing zone.;CONSTITUTION: A SiCN film formation method comprises the following steps: a supply of a first raw gas about a processing zone(5) is performed; a supply of a second raw gas about the processing zone is performed; a supply of a third raw gas about the processing zone is performed; a supply of the first process gas about the processing zone is blocked; the first, second, third raw gas is supplied to the processing zone without a plasmization outside the processing zone; and through a first, a second, a third, and a fourth process, the processing zone is heated with a first temperature in which a silane gas, a nitrous gas, and a hydrocarbon gas are reacted each other.;COPYRIGHT KIPO 2013