HIGH SPEED MAGNETIC RANDOM ACCESS MEMORY-BASED TERNARY CAM

摘要

PURPOSE: A high speed magnetic random access memory-based ternary CAM is provided to record three individual cell logic states in an MRAM-based TCAM cell. CONSTITUTION: First and second magnetic tunnel junctions (2,2') include a search layer, a storage layer, and a tunnel barrier layer. First and second conductive straps (7,7') pass a heating current through the first and second magnetic tunnel junctions. A conductive wire (3) serially connects the first and second magnetic tunnel junctions. A first current wire (4) passes a first current to selectively record first record data in the first magnetic tunnel junction. A second current wire (4') passes a record current to selectively record second record data in the second magnetic tunnel junction.