ION IMPLANTING APPARATUS CAPABLE OF TUNING BOTH THE AMOUNT OF A BEAM CURRENT AND THE SIZE OF A BEAM WITH EXCELLENT REPRODUCIBILITY, AND A CONTROL METHOD THEREOF

摘要

PURPOSE: An ion implanting apparatus and a control method thereof are provided to prevent residual beams by performing beam tuning based on both the measured waveform and measured current of a beam. CONSTITUTION: Multiple fixed-type beam measuring instruments (76) and multiple mobile or fixed-type beam measuring devices (78) measure the vertical profile, horizontal profile, and current integral value of an ion beam. A control device (100) simultaneously adjusts the amount of a preset beam current and the horizontal size of a beam which is required to secure the uniformity of horizontal ion beam density distribution. The control device adjusts the amount of a preset beam current and the horizontal size of a beam based on measurement values of the fixed-type beam measuring instruments and mobile or fixed-type beam measuring devices in a beam current adjusting stage before implanting ions. [Reference numerals] (AA) Highest position; (BB) Lowest position; (CC) Lifting device; (DD) Scan ion beam; (EE) Beam current