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CRUCIBLE FOR GROWING SINGLE CRYSTAL SILICON, MANUFACTURING METHOD OF SAME, AND PRODUCING METHOD OF SINGLE CRYSTAL SILICON?
CRUCIBLE FOR GROWING SINGLE CRYSTAL SILICON, MANUFACTURING METHOD OF SAME, AND PRODUCING METHOD OF SINGLE CRYSTAL SILICON?
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机译:单晶硅生长的坩埚,相同晶体的制造方法以及单晶硅的生产方法?
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摘要
The purpose of the present invention is to provide a crucible for growing single crystal silicon, which enables to manufacture single crystal silicon showing a high conversion efficiency compared to the conventional single crystal silicon by preventing introduction of impurities in lifting single crystal silicon in the Czochralski method (CZ method), a manufacturing method of the crucible for growing single crystal silicon, and a production method of single crystal silicon. In order to realize the purpose, the present invention provides a crucible for growing single crystal which is used in growing single crystal silicon according to the Czochralski method, a manufacturing method of the crucible; and a production method of single crystal silicon using the crucible for growing single crystal, wherein the crucible for growing single crystal silicon comprises a low temperature melting layer, which is formed on the surface of a main body of the crucible on the side in contact with the melting silicon and melts at a lower temperature than the sintering temperature of the main body of the crucible made of amorphous fire-proof materials; and a coating layer with the porosity of 50% or less and the layer thickness of 0.1 mm or more by coating slurry containing silicon nitride on the low temperature melting layer and sintering.;COPYRIGHT KIPO 2014
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