The present invention is a solid-phase reaction (solid-vapor reaction) using the process bear (bare) graphite the SiC coating layer on a substrate or SiC / Si 3 N 4 and provides the manufacturing method to form a coating layer. Synthesis of the SiC layer is a graphite substrate by the reaction between the C atoms of the SiO gas and the graphite, and SiC / Si 3 N 4 Synthesis of layer SiO gas, N2 and each made by a reaction between the C atoms of the graphite. The thickness of the SiC coating layer is affected depending on the porosity of the substrate, an increase in the reaction temperature, or increase the reaction time. In addition, the hardness of the SiC coating by adjusting the reaction temperature may be increased 10 to 15-fold compared to the bare graphite substrate. In the case of the SiC / Si 3 N 4 coating, the SiC formed in a much thinner thickness than the coating, but the surface hardness is higher. The experiments carried out at high temperature thermal oxidation or the SiC coating Si 3 N 4 Substrate oxidation resistance was increased compared to bare (bare) substrate coating layer is formed, in particular SiC / Si 3 N 4 is the thermal oxidation-preventing effect of the coating was excellent.
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机译：本发明是一种固相反应（固-蒸气反应），其使用工艺（裸露）石墨在基底上的SiC涂层或SiC / Si 3 N 4 并提供形成涂层的制造方法。 SiC层的合成是通过SiO气体中的C原子与石墨之间的反应和SiC / Si 3 N 4 层的合成而形成的石墨衬底。 ，N 2和每个通过石墨的C原子之间的反应制成。 SiC涂层的厚度取决于基材的孔隙率，反应温度的升高或反应时间的增加而受到影响。另外，与裸石墨基板相比，通过调节反应温度的SiC涂层的硬度可以增加10至15倍。在SiC / Si 3 N 4 涂层的情况下，SiC形成的厚度比涂层薄得多，但表面硬度更高。在高温热氧化或SiC涂层Si 3 N 4 上进行的实验与形成裸露（裸露）衬底涂层相比，提高了衬底抗氧化性SiC / Si 3 N 4 是涂层的防热氧化效果极佳。
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