首页> 外国专利> SOLAR CELL ELECTRODE COMPRISING A THIN LAYER OF INDIUM-DOPED ZINC OXIDE NANORODS AND MEHTOD FOR PREPARING THE SAME

SOLAR CELL ELECTRODE COMPRISING A THIN LAYER OF INDIUM-DOPED ZINC OXIDE NANORODS AND MEHTOD FOR PREPARING THE SAME

机译:包含掺杂有铟的氧化锌纳米薄膜的薄层的太阳能电池及其制备方法

摘要

PURPOSE: An electrode for a solar battery and a manufacturing method thereof are provided to have high permeability and low specific resistance by enhancing light absorption degree and to reduce manufacturing costs. CONSTITUTION: A thin film layer perpendicularly arrays a nanorod. The length of the nanorod is 0.5Mm to 2.0Mmfm. The diameter of the nanorod is 50nm to 200nm. The aspect ratio of the nanorod is 5.0 to 25.0. Amount of indium which is doped in the nanorod is 0.1 wt% to 0.5 wt%. The surface of a glass substrate is sputtered. A ZnO:In nanorod is formed on the glass substrate which is sputtered. An end portion of the A ZnO:In nanorod is etched.
机译:用途:太阳能电池用电极及其制造方法被提供为通过提高光吸收度并降低制造成本而具有高渗透性和低电阻率。组成:一个薄膜层垂直排列一个纳米棒。纳米棒的长度为0.5Mm至2.0Mmfm。纳米棒的直径为50nm至200nm。纳米棒的长径比为5.0至25.0。纳米棒中掺杂的铟的量为0.1重量%至0.5重量%。溅射玻璃基板的表面。在溅射的玻璃基板上形成ZnO:In纳米棒。蚀刻A ZnO:In纳米棒的端部。

著录项

  • 公开/公告号KR101304643B1

    专利类型

  • 公开/公告日2013-09-05

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20110032845

  • 发明设计人 최대규;최성민;김경도;정은수;

    申请日2011-04-08

  • 分类号H01L31/042;H01L31/0224;H01L31/18;

  • 国家 KR

  • 入库时间 2022-08-21 16:24:34

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