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Nanoscale lithography method on graphene using oxidation and hydrogenation

机译:氧化加氢在石墨烯上的纳米光刻技术

摘要

PURPOSE: A system for manufacturing the nano lithography of graphene using oxidization and hydrogenation and a method for the same are provided to omit chemical treatment and to use an atomic force microscope. CONSTITUTION: Oxidized patterns through an atomic force microscope-anodic lithography or hydrogenated patterns through an atomic force microscope-cathodic lithography are formed on graphene in order to form nano-sized oxidizing or hydrogenating process patterns on the graphene. In the atomic force microscope-anodic lithography, a tip and the graphene with a contact mode are fixed at 0.1um/s under room temperature and 20% relative humidity, and a voltage between the tip and the graphene is increased. In the atomic force microscope-cathodic lithography, the tip and the graphene with a contact mode are fixed at 0.1um/s under room temperature and 33% relative humidity, and a voltage between the tip and the graphene is increased.
机译:目的:提供一种用于通过氧化和氢化来制造石墨烯的纳米光刻的系统及其方法,以省略化学处理并使用原子力显微镜。组成:在石墨烯上形成通过原子力显微镜-阳极光刻法形成的氧化图案或通过原子力显微镜-阴极光刻法形成的氢化图案,以便在石墨烯上形成纳米级的氧化或氢化工艺图案。在原子力显微镜阳极光刻中,具有接触模式的尖端和石墨烯在室温和20%相对湿度下固定为0.1um / s,并且尖端和石墨烯之间的电压增加。在原子力显微镜阴极光刻中,具有接触模式的尖端和石墨烯在室温和33%相对湿度下固定在0.1um / s,并且尖端和石墨烯之间的电压增加。

著录项

  • 公开/公告号KR101307538B1

    专利类型

  • 公开/公告日2013-09-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20110002159

  • 发明设计人 박배호;변익수;

    申请日2011-01-10

  • 分类号G03F7/20;B82B3;

  • 国家 KR

  • 入库时间 2022-08-21 16:24:29

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