首页> 外国专利> MANUFACTURING DEVICE FOR MONOCRYSTALLINE ALUMINIUM NITRIDE, MANUFACTURING METHOD OF MONOCRYSTALLINE ALUMINIUM NITRIDE, AND MONOCRYSTALLINE ALUMINIUM NITRIDE

MANUFACTURING DEVICE FOR MONOCRYSTALLINE ALUMINIUM NITRIDE, MANUFACTURING METHOD OF MONOCRYSTALLINE ALUMINIUM NITRIDE, AND MONOCRYSTALLINE ALUMINIUM NITRIDE

机译:单晶氮化铝的制造装置,单晶氮化铝的制造方法和单晶氮化铝

摘要

FIELD: ;SUBSTANCE: invention refers to the method for obtaining monocrystalline aluminium nitride that is included in composition of light-emitting diodes and laser elements Device includes crucible 9, in inner part of which there contained is initial aluminium nitride 11 and inoculating crystal 12 placed so that it can be located opposite initial aluminium nitride; at that, crucible 9 consists of internal crucible 2 with initial aluminium nitride 11 and inoculating crystal 12 inside it; at that, internal crucible is corrosion-resistant to sublimate gas of initial aluminium nitride and includes a single metal housing having ionic radius that exceeds ionic radius of aluminium, or contains metal nitride; and external crucible 4 made from boron nitride that covers internal crucible 2 In addition, crucible 9 can contain graphite crucible 6 covering external crucible 4.;EFFECT: proposed invention allows obtaining aluminium nitride of high level of cleanliness (with carbon concentration of not more than 10 parts by weight).;11 cl, 2 dwg, 1 tbl, 4 ex.
机译:技术领域:本发明涉及用于获得包括在发光二极管和激光元件的组成中的单晶氮化铝的方法。该装置包括坩埚9,在坩埚9的内部包含初始氮化铝11和放置的接种晶体12使其可以与初始氮化铝相对放置;此时,坩埚9由内部坩埚2和初始的氮化铝11以及内部的晶体12构成。此时,内部坩埚对初始氮化铝的升华气体具有耐腐蚀性,并且包括具有离子半径超过铝离子半径的单个金属外壳,或者包含金属氮化物。以及由氮化硼制成的覆盖内部坩埚2的外部坩埚4此外,坩埚9可以包含覆盖外部坩埚4的石墨坩埚6;效果:本发明能够获得高清洁度的氮化铝(碳浓度不超过10重量份);; 11 cl,2 dwg,1 tbl,4 ex。

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