A method for reducing the size of the minimum pitch in a structure

摘要

A method which comprises:Irradiation of a photoresist (302; 402; 502; 602; 702; 802; 902), which, on a substrate (301; 401; 501; 601; 701; 801) is formed, with a radiation, wherein a mask (303; 403; 503; 603; 703; 803; 901) is used, in order to set one or a plurality of first regions (312; 405; 507; 607, 707; 807) of the photoresist, one or more second regions (313; 406; 508; 608, 708, 808) of the photoresist and one or more third regions (314; 408; 509; 609; 709; 809) to form of the photoresist;Removal of the one or more first regions (312; 405; 507; 607, 707; 807) of the photoresist of the substrate (301; 401; 501; 601; 701; 801), wherein a first chemical substance is used; andRemoval of the one or more second regions (313; 406; 508; 608, 708, 808) of the photoresist of the substrate (301; 401; 501; 601; 701; 801), wherein a second chemical substance is used.