A semiconductor device comprising a semiconductor substrate having a diode region and an IGBT region

摘要

A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low-doped region provided between a second conductivity-type cathode region of the diode region and a first-conductivity-type collector region of the IGBT region is. The low-doped region includes at least a first low-doped region of the first conductivity type, which has a lower density of dopants of the first conductivity type than the collector region, or a second low-doped region of the second conductivity type, which has a lower density of the dopants of the second conductivity type Cathode area has.