Metal gate electrodes structures with a large is epsilon (ε), which, by means of a reduction of the gate of the filling aspect ratio in a replacement gate technology are produced

摘要

In the manufacture of complex metal gate electrodes structures with a large ε on the basis of a replacement gate method, the filling conditions during the filling in of the highly conductive electrodes metal, for example of aluminum improved by an upper region of the first outlet work metal, for example, a titanium nitride material in p - transistors, is removed. In some illustrative embodiments, the selective removal of the said metal-containing electrode material in an upper region of the gate opening without a significant increase in the total process complexity is achieved.