Method for manufacturing composite to interconnect two joining parts e.g. semiconductor chip, of power semiconductor module together, involves heating joining parts and connecting unit to predetermined maximum temperature by heating element

摘要

The method involves arranging two joining parts (11, 12) and a connecting unit (21) in a pressure chamber. A gas-tight portion is generated to accommodate the connecting unit. Gas pressure is generated in the pressure chamber outside the gas-tight portion such that the pressure acts on the gas-tight portion. The connecting unit is located between the joining parts. The joining parts and the connecting unit are heated to predetermined maximum temperature of 210 degree Celsius by a heating element (8) and subsequently cooled. The connecting unit is a silver-containing paste or a sinterable film. An independent claim is also included for a method for manufacturing a power semiconductor module.