Micromechanical sensor for, e.g. analyzing topographies in grid force microscopy, has unilateral bendable cantilever in which gate electrode of FET is inserted, and is spaced at free space from semiconductor substrate

摘要

The micromechanical sensor (1) has a unilateral bendable cantilever (2) in which a gate electrode (3) of a FET is inserted, and is spaced at a free space (7) from a semiconductor substrate (4) corresponding to drain and source regions (5,6) of the FET. The distance of cantilever to semiconductor substrate is changed by bending of the cantilever. The distance between source and drain regions, and distance of cantilever to semiconductor substrate in bent condition and channel layer thickness are selected, such that the short channel effects of FET are achieved. An independent claim is included for a method for producing micromechanical sensor.