Sensor arrangement for characterization of plasma coating -, plasma etching - and the plasma treatment processes as well as a process for the determination of characteristic quantities in these processes

摘要

In accordance with the invention, the sensor arrangement is the plasma etching -, plasma coating - or plasma treatment process that is exposed to the front electrode (2) of the quartz crystal (1) insulated relative to the housing (5) of the arrangement and as a planar langmuir - probe designed and arranged outside of the solids containing alkyl groups with a current voltage characteristic curves - - - measuring device (14) for the measurement of the langmuir - characteristic curve (i_L(U)), with respect to the back electrode (3) of the quartz crystal (1) is a pyrometric sensor (4) for measuring the average temperature (t_Q) the back electrode (3) of the quartz crystal (1) and the oscillating crystal (1) with its formed as planar langmuir - probe front electrode (2) and the pyrometric sensor (4) form a combined sensor (10), which in a sensor housing (5) is arranged, one of the front electrode (2) of the quartz crystal (1) has an opening which is positioned opposite the outside of the sensor housing (5) between its opening and the plasma source, a pivotable in the plasma screen (9) is arranged, the combined sensor (10) and configured to be movable, with measurement - (12, 13, 14) and analysis units and the latter with a computer (15) for data acquisition, - evaluation and - representation are connected, the crystal oscillator (1) with a measuring unit (13) for the determination of the quartz crystal oscillator frequency (f_Q) and the planar langmuir - probe (14) with a measuring unit for the measurement of their current - voltage - characteristic curve (i_L(U)) and the pyrometric sensor (4) with a measuring amplifier (12) is connected, and the computer (15) by means of a measuring program from these measured variables, the deposition or etching rate (r (t)), the plasma density (n_e and / or n_i), the electron temperature (t_e) and the total energy input (e_a) the determined plasma processes.