首页> 外国专利> Preparing pure silicon, useful as raw material in e.g. solar industry, comprises introducing silicon containing gas, as input gas, into a upstream reactor and depositing hot separated bodies, which are silicons, on reactor surfaces

Preparing pure silicon, useful as raw material in e.g. solar industry, comprises introducing silicon containing gas, as input gas, into a upstream reactor and depositing hot separated bodies, which are silicons, on reactor surfaces

机译:制备纯硅,可用作例如硅的原料。太阳能工业包括将含硅气体作为输入气体引入上游反应堆,并在反应堆表面沉积硅等热分离体

摘要

Preparing pure silicon comprises introducing silicon containing gas or gaseous mixture, as input gas, into a upstream reactor (2) and depositing hot separated bodies, which are silicons, on reactor surfaces, where: the upstream reactor forms an output gas; a portion of the input gas, as first output gas, comprises a gas component and at least one second further output gas component; the output gas is introduced into a downstream reactor (7); and at least one portion of the second output gas component is removed from the output gas of the upstream reactor. Preparing pure silicon comprises introducing silicon containing gas or gaseous mixture, as input gas, into a upstream reactor (2) and depositing hot separated bodies, which are silicons, on the reactor surfaces, where: the upstream reactor forms an output gas; a portion of the input gas, as first output gas, comprises a gas component and at least one second further output gas component; the output gas is introduced into a downstream reactor (7); and at least one portion of the second output gas component is removed from the output gas of the upstream reactor, before it is conducted into the downstream reactor. An independent claim is included for a device for preparing pure silicon comprises the upstream reactor and the second downstream reactor, where between the upstream and downstream reactors, a separation device for separating at least one gas component of the output gas of the first upstream gas reactor.
机译:制备纯硅包括将含硅的气体或气态混合物作为输入气体引入上游反应器(2)中,并在反应器表面上沉积为硅的热分离体,其中:上游反应器形成输出气体;作为第一输出气体的一部分输入气体包括气体成分和至少一个第二其他输出气体成分;输出气体被引入下游反应器(7)中;从上游反应器的输出气体中除去至少一部分第二输出气体成分。制备纯硅的步骤包括将含硅的气体或气体混合物作为输入气体引入上游反应器(2)中,并在反应器表面上沉积为硅的热分离体,其中:上游反应器形成输出气体;作为第一输出气体的一部分输入气体包括气体成分和至少一个第二其他输出气体成分;输出气体被引入下游反应器(7)中;在将第二输出气体组分引入下游反应器之前,将其至少一部分从上游反应器的输出气体中除去。包括用于制备纯硅的装置的独立权利要求,其包括上游反应器和第二下游反应器,其中在上游反应器和下游反应器之间,具有分离装置,用于分离第一上游气体反应器的输出气体中的至少一种气体成分。 。

著录项

  • 公开/公告号DE102011120210A1

    专利类型

  • 公开/公告日2013-06-06

    原文格式PDF

  • 申请/专利权人 CENTROTHERM SITEC GMBH;

    申请/专利号DE201110120210

  • 发明设计人 MATICHYN SERHIY;KECK CHRISTIAN;

    申请日2011-12-05

  • 分类号C01B33/035;

  • 国家 DE

  • 入库时间 2022-08-21 16:22:06

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