Magnetic tunnel junction device of memory device, has an upper structure having magnetic layer, and a lower structure having extrinsic vertical magnetization structures formed on magnetic layer and perpendicular magnetization layer

摘要

The magnetic tunnel junction device comprises an upper structure (41) provided with a magnetic layer, and a lower structure (42) provided with two extrinsic vertical magnetization structures formed on magnetic layer and a perpendicular magnetization layer formed on the magnetic layer. A tunnel barrier (50) is arranged between the two structures. The lower structure further comprises supplementary extrinsic structures of vertical magnetization formed within the magnetic layer and the perpendicular magnetization layer formed on the magnetic layer. Independent claims are included for the following: (1) an electronic device; and (2) a memory system.