Method for refreshing memory device e.g. Rambus dynamic RAM, involves selecting third address from pool of addresses with range defined by significant bits of one of first and second address, to perform respective refresh to cell

摘要

The method involves performing a respective refreshing process (S130) of weak cell with a first address, if refresh address is second address. A respective refreshing process (S150) is performed to strong cell from first cell or second cell with strong third address, if the refresh address is third address. The address information is stored by first, second and third address. The third address is selected from pool of addresses with range defined by significant bits of one of first and second address. An independent claim is included for refreshing address generator.