Method for forming and engraving insulating layer of grid on silicon plate, involves engraving layer of promoter and layer of silicon nitride when result of depositing, insolating and developing processes is satisfied

摘要

The method involves forming an oxide layer of silicon nitride on a silicon plate (31-33). A photoresist layer is deposited (38) on a layer of an adhesion promoter. The photoresist layer is insolated and developed (39). The photoresist layer is removed (40), and the depositing, insolating and developing processes are repeatedly performed when the results of depositing, insolating and developing processes are not satisfactory. The layer of the promoter and the layer of silicon nitride are engraved (41, 42) when the results of depositing, insolating and developing processes are satisfied. The method enables performing shrinkage of a photosensitive resin using a solution containing concentrated sulfuric acid, a mixture from N-Methyl-2-pyrrolidone and hydroxide of tetramethylammonium and a mixture of dimethylsulphoxide and ethanolamine. The adhesion promoter is hexamethyl dichlorosilane.