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Brief description of embodiments of a deep trench in a substrate of the component microelectronics
Brief description of embodiments of a deep trench in a substrate of the component microelectronics
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机译:组件微电子学的衬底中的深沟槽的实施例的简要描述
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摘要
A method of making a trench depth in a substrate comprises a succession of elementary cycles of etching etching a portion of the trench. Each elementary cycle comprises: (▪ a deposit of a passivation layer on the internal walls of the portion of the trench etched during previous cycles; ▪ an anisotropic plasma ion etching pulses of the portion of the trench etched during the preceding cycles, the engraving: o being carried out in an atmosphere comprising a passivating species, and comprising at least a first sequence of etching followed by a second sequence of the etching power of less than the power of the first sequence of etching.
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