Method for manufacturing image sensor illuminated by rear face of semiconductor substrate, involves applying potential difference in opening between electrodes formed in free face and rear face to store loads in intermediate layer

摘要

The method involves forming a stack (44) on a rear face of a semiconductor substrate (52), where the stack includes an intermediate layer (48) between two oxide layers (46, 50) and is adapted to store loads in its structure. Potential difference (70) is applied in an opening (64) between an electrode (68) that is formed in a free face of the stack and another electrode (66) that is formed on the rear face of the substrate to store loads in the intermediate layer, where the applied potential difference is higher than 100 volts. An independent claim is also included for an image sensor.