METHOD FOR TESTING A SEMICONDUCTOR STRUCTURE ON INSULATION AND APPLICATION OF SAID TEST FOR THE PRODUCTION OF SUCH A STRUCTURE

摘要

The invention relates to a method for testing a semiconductor-on-insulator structure comprising a support substrate (3), a dielectric layer (2) having a thickness of less than 50 nm and a semiconductor layer (12), said structure comprising a bonding interface (I) between the dielectric layer (2) and the support substrate (1) or the semiconductor layer (12) or inside the dielectric layer (2), characterized in that it comprises measuring the breakdown load (Q) of said dielectric layer (2) and in that said measurement is derived from information relating to the concentration of hydrogen in said layer (2) and / or bonding interface (I). The invention also relates to a method of manufacturing a batch of semiconductor-on-insulator structures implementing said test on a structure taken from said batch.